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Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment
Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides ZnO, In [Formula: see text] O [Formula: see text] , and SnO [Formula: see text] as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) are summarized and co...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2010
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445773/ https://www.ncbi.nlm.nih.gov/pubmed/28883359 http://dx.doi.org/10.3390/ma3114892 |
Sumario: | Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides ZnO, In [Formula: see text] O [Formula: see text] , and SnO [Formula: see text] as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning. |
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