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Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory
We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi(2)Ta(2)O(9)/(HfO(2))(x)(Al(2)O(3))(1−x) (Hf-Al-O) and Pt/SrBi(2)Ta(2)O(9)/HfO(2) gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-st...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2010
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445777/ https://www.ncbi.nlm.nih.gov/pubmed/28883363 http://dx.doi.org/10.3390/ma3114950 |