Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

The literature on polar Gallium Nitride (GaN) surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properti...

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Detalles Bibliográficos
Autores principales: Long, Rathnait D., McIntyre, Paul C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448900/
http://dx.doi.org/10.3390/ma5071297

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448900/
http://dx.doi.org/10.3390/ma5071297

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