Initial Processes of Atomic Layer Deposition of Al(2)O(3) on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Interface-formation processes in atomic layer deposition (ALD) of Al(2)O(3) on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al(2)O(3) ALD was carried out by repeating a cycle of Al(CH(3))(3) (trimethylaluminum, TMA) adsorption and oxidation by H(2)O. The first two ALD...

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Detalles Bibliográficos
Autores principales: Jevasuwan, Wipakorn, Urabe, Yuji, Maeda, Tatsuro, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Hata, Masahiko, Taoka, Noriyuki, Takenaka, Mitsuru, Takagi, Shinichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448916/
https://www.ncbi.nlm.nih.gov/pubmed/28817054
http://dx.doi.org/10.3390/ma5030404

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448916/
https://www.ncbi.nlm.nih.gov/pubmed/28817054
http://dx.doi.org/10.3390/ma5030404

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