A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films

Amorphous nitrogen-doped silicon carbide (α-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trim...

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Detalles Bibliográficos
Autores principales: Chen, Sheng-Wen, Wang, Yu-Sheng, Hu, Shao-Yu, Lee, Wen-Hsi, Chi, Chieh-Cheng, Wang, Ying-Lang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448926/
https://www.ncbi.nlm.nih.gov/pubmed/28817052
http://dx.doi.org/10.3390/ma5030377

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448926/
https://www.ncbi.nlm.nih.gov/pubmed/28817052
http://dx.doi.org/10.3390/ma5030377

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