Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

Porous silicon (PSi) layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm(2) fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the la...

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Detalles Bibliográficos
Autores principales: Behzad, Kasra, Mat Yunus, Wan Mahmood, Talib, Zainal Abidin, Zakaria, Azmi, Bahrami, Afarin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448951/
https://www.ncbi.nlm.nih.gov/pubmed/28817037
http://dx.doi.org/10.3390/ma5010157

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448951/
https://www.ncbi.nlm.nih.gov/pubmed/28817037
http://dx.doi.org/10.3390/ma5010157

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