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Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon
Porous silicon (PSi) layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm(2) fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the la...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5448951/ https://www.ncbi.nlm.nih.gov/pubmed/28817037 http://dx.doi.org/10.3390/ma5010157 |