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InN Nanowires: Growth and Optoelectronic Properties
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the g...
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Formato: | Online Artículo Texto |
Lenguaje: | English |
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MDPI
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449004/ http://dx.doi.org/10.3390/ma5112137 |
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author | Calarco, Raffaella |
author_facet | Calarco, Raffaella |
author_sort | Calarco, Raffaella |
collection | PubMed |
description | An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed. |
format | Online Article Text |
id | pubmed-5449004 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2012 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-54490042017-07-28 InN Nanowires: Growth and Optoelectronic Properties Calarco, Raffaella Materials (Basel) Review An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed. MDPI 2012-10-31 /pmc/articles/PMC5449004/ http://dx.doi.org/10.3390/ma5112137 Text en © 2012 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/). |
spellingShingle | Review Calarco, Raffaella InN Nanowires: Growth and Optoelectronic Properties |
title | InN Nanowires: Growth and Optoelectronic Properties |
title_full | InN Nanowires: Growth and Optoelectronic Properties |
title_fullStr | InN Nanowires: Growth and Optoelectronic Properties |
title_full_unstemmed | InN Nanowires: Growth and Optoelectronic Properties |
title_short | InN Nanowires: Growth and Optoelectronic Properties |
title_sort | inn nanowires: growth and optoelectronic properties |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449004/ http://dx.doi.org/10.3390/ma5112137 |
work_keys_str_mv | AT calarcoraffaella innnanowiresgrowthandoptoelectronicproperties |