InN Nanowires: Growth and Optoelectronic Properties

An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the g...

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Detalles Bibliográficos
Autor principal: Calarco, Raffaella
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449004/
http://dx.doi.org/10.3390/ma5112137