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InN Nanowires: Growth and Optoelectronic Properties
An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the g...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2012
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449004/ http://dx.doi.org/10.3390/ma5112137 |