Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin fil...

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Detalles Bibliográficos
Autores principales: Astuti, Budi, Tanikawa, Masahiro, Rahman, Shaharin Fadzli Abd, Yasui, Kanji, Hashim, Abdul Manaf
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449006/
http://dx.doi.org/10.3390/ma5112270

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449006/
http://dx.doi.org/10.3390/ma5112270

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