Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models

The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra large-scale integration is reviewed. The loss of insulation between neighboring interconnects represents an emerging back end-of-the-line reliability issue that is not fully understood. After describ...

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Detalles Bibliográficos
Autor principal: Wong, Terence K.S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449018/
http://dx.doi.org/10.3390/ma5091602

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449018/
http://dx.doi.org/10.3390/ma5091602

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