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Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra large-scale integration is reviewed. The loss of insulation between neighboring interconnects represents an emerging back end-of-the-line reliability issue that is not fully understood. After describ...
Autor principal: | Wong, Terence K.S. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2012
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449018/ http://dx.doi.org/10.3390/ma5091602 |
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