Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the...

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Detalles Bibliográficos
Autores principales: Shi, Yunbo, Guo, Hao, Ni, Haiqiao, Xue, Chenyang, Niu, Zhichuan, Tang, Jun, Liu, Jun, Zhang, Wendong, He, Jifang, Li, Mifeng, Yu, Ying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449059/
http://dx.doi.org/10.3390/ma5122917

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449059/
http://dx.doi.org/10.3390/ma5122917

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