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Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures

Cu(2)S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probin...

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Detalles Bibliográficos
Autores principales: Gaubas, Eugenijus, Brytavskyi, Ievgen, Ceponis, Tomas, Kalendra, Vidmantas, Tekorius, Audrius
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449076/
http://dx.doi.org/10.3390/ma5122597