Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures

Cu(2)S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probin...

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Detalles Bibliográficos
Autores principales: Gaubas, Eugenijus, Brytavskyi, Ievgen, Ceponis, Tomas, Kalendra, Vidmantas, Tekorius, Audrius
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449076/
http://dx.doi.org/10.3390/ma5122597
Descripción
Sumario:Cu(2)S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.

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