Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures

Cu(2)S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probin...

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Autores principales: Gaubas, Eugenijus, Brytavskyi, Ievgen, Ceponis, Tomas, Kalendra, Vidmantas, Tekorius, Audrius
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449076/
http://dx.doi.org/10.3390/ma5122597
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author Gaubas, Eugenijus
Brytavskyi, Ievgen
Ceponis, Tomas
Kalendra, Vidmantas
Tekorius, Audrius
author_facet Gaubas, Eugenijus
Brytavskyi, Ievgen
Ceponis, Tomas
Kalendra, Vidmantas
Tekorius, Audrius
author_sort Gaubas, Eugenijus
collection PubMed
description Cu(2)S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.
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spelling pubmed-54490762017-07-28 Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures Gaubas, Eugenijus Brytavskyi, Ievgen Ceponis, Tomas Kalendra, Vidmantas Tekorius, Audrius Materials (Basel) Article Cu(2)S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL) and the photo-ionization spectroscopy (PIS) implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates. MDPI 2012-12-04 /pmc/articles/PMC5449076/ http://dx.doi.org/10.3390/ma5122597 Text en © 2012 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Gaubas, Eugenijus
Brytavskyi, Ievgen
Ceponis, Tomas
Kalendra, Vidmantas
Tekorius, Audrius
Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures
title Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures
title_full Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures
title_fullStr Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures
title_full_unstemmed Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures
title_short Spectroscopy of Deep Traps in Cu(2)S-CdS Junction Structures
title_sort spectroscopy of deep traps in cu(2)s-cds junction structures
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5449076/
http://dx.doi.org/10.3390/ma5122597
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AT kalendravidmantas spectroscopyofdeeptrapsincu2scdsjunctionstructures
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