Layer-dependent semiconductor-metal transition of SnO/Si(001) heterostructure and device application

As the downscaling of electronic devices continues, the problems of leakage currents and heat dissipation become more and more serious. To address these issues, new materials and new structures are explored. Here, we propose an interesting heterostructure made of ultrathin SnO layers on Si(001) surf...

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Detalles Bibliográficos
Autores principales: Xiao, Chengcheng, Wang, Fang, Wang, Yao, Yang, Shengyuan A., Jiang, Jianzhong, Yang, Ming, Lu, Yunhao, Wang, Shijie, Feng, Yuanping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5451440/
https://www.ncbi.nlm.nih.gov/pubmed/28566756
http://dx.doi.org/10.1038/s41598-017-02832-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5451440/
https://www.ncbi.nlm.nih.gov/pubmed/28566756
http://dx.doi.org/10.1038/s41598-017-02832-8

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