Thin Al(1−x)Ga(x)As(0.56)Sb(0.44) diodes with extremely weak temperature dependence of avalanche breakdown

When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies. We have carried out such a study on thin Al(1–x)Ga(x...

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Detalles Bibliográficos
Autores principales: Zhou, Xinxin, Tan, Chee Hing, Zhang, Shiyong, Moreno, Manuel, Xie, Shiyu, Abdullah, Salman, Ng, Jo Shien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society Publishing 2017
Materias:
Engineering
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5451814/
https://www.ncbi.nlm.nih.gov/pubmed/28573013
http://dx.doi.org/10.1098/rsos.170071

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5451814/
https://www.ncbi.nlm.nih.gov/pubmed/28573013
http://dx.doi.org/10.1098/rsos.170071

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