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Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review
The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upo...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5452084/ https://www.ncbi.nlm.nih.gov/pubmed/28809321 http://dx.doi.org/10.3390/ma6020500 |