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Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review

The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upo...

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Autores principales: Sun, Jian, Kosel, Jürgen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5452084/
https://www.ncbi.nlm.nih.gov/pubmed/28809321
http://dx.doi.org/10.3390/ma6020500
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author Sun, Jian
Kosel, Jürgen
author_facet Sun, Jian
Kosel, Jürgen
author_sort Sun, Jian
collection PubMed
description The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed.
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spelling pubmed-54520842017-07-28 Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review Sun, Jian Kosel, Jürgen Materials (Basel) Review The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device’s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. MDPI 2013-02-13 /pmc/articles/PMC5452084/ /pubmed/28809321 http://dx.doi.org/10.3390/ma6020500 Text en © 2013 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Review
Sun, Jian
Kosel, Jürgen
Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review
title Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review
title_full Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review
title_fullStr Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review
title_full_unstemmed Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review
title_short Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review
title_sort extraordinary magnetoresistance in semiconductor/metal hybrids: a review
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5452084/
https://www.ncbi.nlm.nih.gov/pubmed/28809321
http://dx.doi.org/10.3390/ma6020500
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