Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon

Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load P(po) for appearance of pop-out fluctuates in a relatively large range, which makes it hard to s...

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Detalles Bibliográficos
Autores principales: Huang, Hu, Zhao, Hongwei, Shi, Chengli, Zhang, Lin, Wan, Shunguang, Geng, Chunyang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5452323/
https://www.ncbi.nlm.nih.gov/pubmed/28809223
http://dx.doi.org/10.3390/ma6041496

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5452323/
https://www.ncbi.nlm.nih.gov/pubmed/28809223
http://dx.doi.org/10.3390/ma6041496

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