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Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon
Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load P(po) for appearance of pop-out fluctuates in a relatively large range, which makes it hard to s...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5452323/ https://www.ncbi.nlm.nih.gov/pubmed/28809223 http://dx.doi.org/10.3390/ma6041496 |