Dislocation Energetics and Pop-Ins in AlN Thin Films by Berkovich Nanoindentation

Nanoindentation-induced multiple pop-ins were observed in the load-displacement curves when the mechanical responses of AlN films grown on c-plane sapphire substrates were investigated by using Berkovich indenters. No evidence of phase transformation is revealed by cross-sectional transmission electron microscopy (XTEM) and selected area diffraction (SAD) analyses. Instead XTEM observations suggest that these “instabilities” resulted from the sudden nucleation of dislocations propagating along the slip systems lying on the {0001} basal planes and the [Formula: see text] pyramidal planes commonly observed in hexagonal compound semiconductors. Based on this scenario, an energetic estimation of dislocation nucleation is made.