Crystallization of Electrodeposited Germanium Thin Film on Silicon (100)

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl(4):C(3)H(8)O(2)) electrolyte with constant current of 50 mA for 30 min. The measured...

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Detalles Bibliográficos
Autores principales: Abidin, Mastura Shafinaz Zainal, Matsumura, Ryo, Anisuzzaman, Mohammad, Park, Jong-Hyeok, Muta, Shunpei, Mahmood, Mohamad Rusop, Sadoh, Taizoh, Hashim, Abdul Manaf
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5452791/
https://www.ncbi.nlm.nih.gov/pubmed/28788375
http://dx.doi.org/10.3390/ma6115047

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5452791/
https://www.ncbi.nlm.nih.gov/pubmed/28788375
http://dx.doi.org/10.3390/ma6115047

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