Effects of Asymmetric Quantum Wells on the Structural and Optical Properties of InGaN-Based Light-Emitting Diodes

A metalorganic vapor phase epitaxy-grown InGaN/GaN multiple-quantum-well (MQW) with three graded-thickness wells (the first-grown well had the greatest width) near the n-GaN was used as the active layer of an LED. For LEDs with an asymmetric quantum well (AQW), high-resolution X-ray diffraction and...

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Detalles Bibliográficos
Autores principales: Tsai, Chia-Lung, Wu, Wei-Che
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453200/
https://www.ncbi.nlm.nih.gov/pubmed/28788647
http://dx.doi.org/10.3390/ma7053758

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453200/
https://www.ncbi.nlm.nih.gov/pubmed/28788647
http://dx.doi.org/10.3390/ma7053758

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