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A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope
Metal-Insulator-Metal (MIM) structures have raised as the most promising configuration for next generation information storage, leading to great performance and fabrication-friendly Resistive Random Access Memories (RRAM). In these cells, the memory concept is no more based on the charge storage, bu...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453275/ https://www.ncbi.nlm.nih.gov/pubmed/28788561 http://dx.doi.org/10.3390/ma7032155 |