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Germanium Based Field-Effect Transistors: Challenges and Opportunities
The performance of strained silicon (Si) as the channel material for today’s metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-powe...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2014
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453288/ https://www.ncbi.nlm.nih.gov/pubmed/28788569 http://dx.doi.org/10.3390/ma7032301 |