Electrical Characteristics of the Uniaxial-Strained nMOSFET with a Fluorinated HfO(2)/SiON Gate Stack

The channel fluorine implantation (CFI) process was integrated with the Si(3)N(4) contact etch stop layer (SiN CESL) uniaxial-strained n-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) with the hafnium oxide/silicon oxynitride (HfO(2)/SiON) gate stack. The SiN CESL process clearl...

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Detalles Bibliográficos
Autor principal: Chen, Yung-Yu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453296/
https://www.ncbi.nlm.nih.gov/pubmed/28788572
http://dx.doi.org/10.3390/ma7032370

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453296/
https://www.ncbi.nlm.nih.gov/pubmed/28788572
http://dx.doi.org/10.3390/ma7032370

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