Characterization of High-k Nanolayers by Grazing Incidence X-ray Spectrometry

The accurate characterization of nanolayered systems is an essential topic for today’s developments in many fields of material research. Thin high-k layers and gate stacks are technologically required for the design of current and future electronic devices and can be deposited, e.g., by Atomic Layer...

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Detalles Bibliográficos
Autores principales: Müller, Matthias, Hönicke, Philipp, Detlefs, Blanka, Fleischmann, Claudia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453343/
https://www.ncbi.nlm.nih.gov/pubmed/28788611
http://dx.doi.org/10.3390/ma7043147

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453343/
https://www.ncbi.nlm.nih.gov/pubmed/28788611
http://dx.doi.org/10.3390/ma7043147

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