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Characterization of High-k Nanolayers by Grazing Incidence X-ray Spectrometry

The accurate characterization of nanolayered systems is an essential topic for today’s developments in many fields of material research. Thin high-k layers and gate stacks are technologically required for the design of current and future electronic devices and can be deposited, e.g., by Atomic Layer...

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Detalles Bibliográficos
Autores principales:	Müller, Matthias, Hönicke, Philipp, Detlefs, Blanka, Fleischmann, Claudia
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2014
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453343/ https://www.ncbi.nlm.nih.gov/pubmed/28788611 http://dx.doi.org/10.3390/ma7043147

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