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Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

A comprehensive study on the ternary dielectric, LaGdO(3), synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandga...

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Detalles Bibliográficos
Autores principales: Pavunny, Shojan P., Scott, James F., Katiyar, Ram S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453369/
https://www.ncbi.nlm.nih.gov/pubmed/28788589
http://dx.doi.org/10.3390/ma7042669