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Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices
A comprehensive study on the ternary dielectric, LaGdO(3), synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandga...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5453369/ https://www.ncbi.nlm.nih.gov/pubmed/28788589 http://dx.doi.org/10.3390/ma7042669 |