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Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT) was demonstrated. Photochemical activation of sol-gel-derived AlO(x) films under 150 °C permitted the formation of a dense fil...

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Detalles Bibliográficos
Autores principales:	Kim, Jaekyun, Park, Chang Jun, Yi, Gyeongmin, Choi, Myung-Seok, Park, Sung Kyu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455382/ https://www.ncbi.nlm.nih.gov/pubmed/28793608 http://dx.doi.org/10.3390/ma8105352

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