Single-Crystal Y(2)O(3) Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Single-crystal atomic-layer-deposited (ALD) Y(2)O(3) films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 × 6 and GaAs(111)A-2 × 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electr...

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Detalles Bibliográficos
Autores principales: Lin, Y. H., Cheng, C. K., Chen, K. H., Fu, C. H., Chang, T. W., Hsu, C. H., Kwo, J., Hong, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455383/
http://dx.doi.org/10.3390/ma8105364

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455383/
http://dx.doi.org/10.3390/ma8105364

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