GaN Micromechanical Resonators with Meshed Metal Bottom Electrode

This work describes a novel architecture to realize high-performance gallium nitride (GaN) bulk acoustic wave (BAW) resonators. The method is based on the growth of a thick GaN layer on a metal electrode grid. The fabrication process starts with the growth of a thin GaN buffer layer on a Si (111) su...

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Detalles Bibliográficos
Autores principales: Ansari, Azadeh, Liu, Che-Yu, Lin, Chien-Chung, Kuo, Hao-Chung, Ku, Pei-Cheng, Rais-Zadeh, Mina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455440/
https://www.ncbi.nlm.nih.gov/pubmed/28787997
http://dx.doi.org/10.3390/ma8031204

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455440/
https://www.ncbi.nlm.nih.gov/pubmed/28787997
http://dx.doi.org/10.3390/ma8031204

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