Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical...

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Detalles Bibliográficos
Autores principales: Souaf, Manel, Baira, Mourad, Nasr, Olfa, Hadj Alouane, Mohamed Helmi, Maaref, Hassen, Sfaxi, Larbi, Ilahi, Bouraoui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455476/
https://www.ncbi.nlm.nih.gov/pubmed/28793465
http://dx.doi.org/10.3390/ma8084699

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455476/
https://www.ncbi.nlm.nih.gov/pubmed/28793465
http://dx.doi.org/10.3390/ma8084699

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