Cargando…

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical...

Descripción completa

Detalles Bibliográficos
Autores principales:	Souaf, Manel, Baira, Mourad, Nasr, Olfa, Hadj Alouane, Mohamed Helmi, Maaref, Hassen, Sfaxi, Larbi, Ilahi, Bouraoui
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455476/ https://www.ncbi.nlm.nih.gov/pubmed/28793465 http://dx.doi.org/10.3390/ma8084699

Ejemplares similares

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
por: Azeza, Bilel, et al.
Publicado: (2015)

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency
por: Ezzedini, Maher, et al.
Publicado: (2017)

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography
por: Ilahi, Bouraoui, et al.
Publicado: (2016)

Evolution of wetting layer in InAs/GaAs quantum dot system
por: Chen, YH, et al.
Publicado: (2006)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Quantitative strain analysis of InAs/GaAs quantum dot materials
por: Vullum, Per Erik, et al.
Publicado: (2017)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation
por: Hussain, Sajid, et al.
Publicado: (2016)

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots
por: Zhang, Hongyi, et al.
Publicado: (2012)

Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
por: Baira, Mourad, et al.
Publicado: (2019)

Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots
por: Baira, Mourad, et al.
Publicado: (2019)

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
por: Kiravittaya, S, et al.
Publicado: (2006)

Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation
por: Hu, Xian, et al.
Publicado: (2020)

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
por: Utrilla, Antonio D, et al.
Publicado: (2014)

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
por: Al-Saigh, Reem, et al.
Publicado: (2018)

Phonon Transport in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022)

Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
por: Du, Yong, et al.
Publicado: (2022)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
por: Strom, NW, et al.
Publicado: (2007)

The influence of temperature on the photoluminescence properties of single InAs quantum dots grown on patterned GaAs
por: Tommila, Juha, et al.
Publicado: (2012)

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
por: Dai, Liping, et al.
Publicado: (2015)

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
por: Zhou, Xiaolong, et al.
Publicado: (2011)

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
por: Liu, Yao, et al.
Publicado: (2015)

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
por: Wang, L, et al.
Publicado: (2006)

Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
por: Helfrich, Mathieu, et al.
Publicado: (2011)

Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?
por: Chen, Zi-Bin, et al.
Publicado: (2012)

Room temperature passive mode-locked laser based on InAs/GaAs quantum-dot superlattice
por: Sobolev, Mikhail, et al.
Publicado: (2012)

Spatial regularity of InAs-GaAs quantum dots: quantifying the dependence of lateral ordering on growth rate
por: Konishi, T., et al.
Publicado: (2017)

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods
por: Zhukov, Alexey E., et al.
Publicado: (2020)

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators
por: Lee, Shuh Ying, et al.
Publicado: (2013)

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
por: Su, Xiang-Bin, et al.
Publicado: (2018)

Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
por: Liang, BL, et al.
Publicado: (2007)

Raman scattering of InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs surfaces
por: Milekhin, Alexander, et al.
Publicado: (2012)

Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode
por: Li, Shulun, et al.
Publicado: (2020)

Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires
por: Haas, Fabian, et al.
Publicado: (2016)

Infrared photodetector sensitized by InAs quantum dots embedded near an Al(0.3)Ga(0.7)As/GaAs heterointerface
por: Murata, Takahiko, et al.
Publicado: (2020)

1.55 µm InAs/GaAs Quantum Dots and High Repetition Rate Quantum Dot SESAM Mode-locked Laser
por: Zhang, Z. Y., et al.
Publicado: (2012)

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
por: Ameen, Tarek A, et al.
Publicado: (2018)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon
por: Xu, Buqing, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_808bgq3mah3tpg2cigbd1j4otk