Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results i...

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Detalles Bibliográficos
Autores principales: Lu, Qifeng, Zhao, Chun, Mu, Yifei, Zhao, Ce Zhou, Taylor, Stephen, Chalker, Paul R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455481/
https://www.ncbi.nlm.nih.gov/pubmed/28793475
http://dx.doi.org/10.3390/ma8084829

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455481/
https://www.ncbi.nlm.nih.gov/pubmed/28793475
http://dx.doi.org/10.3390/ma8084829

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