Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory

This paper presents a novel TaN-Al(2)O(3)-HfSiO(x)-SiO(2)-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO(x)/SiO(2) interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer...

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Detalles Bibliográficos
Autores principales: Lin, Yu-Hsien, Yang, Yi-Yun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455487/
https://www.ncbi.nlm.nih.gov/pubmed/28793494
http://dx.doi.org/10.3390/ma8085112

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455487/
https://www.ncbi.nlm.nih.gov/pubmed/28793494
http://dx.doi.org/10.3390/ma8085112

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