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Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory

This paper presents a novel TaN-Al(2)O(3)-HfSiO(x)-SiO(2)-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO(x)/SiO(2) interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer...

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Detalles Bibliográficos
Autores principales: Lin, Yu-Hsien, Yang, Yi-Yun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455487/
https://www.ncbi.nlm.nih.gov/pubmed/28793494
http://dx.doi.org/10.3390/ma8085112
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author Lin, Yu-Hsien
Yang, Yi-Yun
author_facet Lin, Yu-Hsien
Yang, Yi-Yun
author_sort Lin, Yu-Hsien
collection PubMed
description This paper presents a novel TaN-Al(2)O(3)-HfSiO(x)-SiO(2)-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO(x)/SiO(2) interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide–charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 10(3) P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM.
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spelling pubmed-54554872017-07-28 Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory Lin, Yu-Hsien Yang, Yi-Yun Materials (Basel) Article This paper presents a novel TaN-Al(2)O(3)-HfSiO(x)-SiO(2)-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO(x)/SiO(2) interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide–charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 10(3) P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM. MDPI 2015-08-07 /pmc/articles/PMC5455487/ /pubmed/28793494 http://dx.doi.org/10.3390/ma8085112 Text en © 2015 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lin, Yu-Hsien
Yang, Yi-Yun
Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
title Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
title_full Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
title_fullStr Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
title_full_unstemmed Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
title_short Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
title_sort work function adjustment by using dipole engineering for tan-al(2)o(3)-si(3)n(4)-hfsio(x)-silicon nonvolatile memory
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455487/
https://www.ncbi.nlm.nih.gov/pubmed/28793494
http://dx.doi.org/10.3390/ma8085112
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