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Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
This paper presents a novel TaN-Al(2)O(3)-HfSiO(x)-SiO(2)-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO(x)/SiO(2) interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455487/ https://www.ncbi.nlm.nih.gov/pubmed/28793494 http://dx.doi.org/10.3390/ma8085112 |
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author | Lin, Yu-Hsien Yang, Yi-Yun |
author_facet | Lin, Yu-Hsien Yang, Yi-Yun |
author_sort | Lin, Yu-Hsien |
collection | PubMed |
description | This paper presents a novel TaN-Al(2)O(3)-HfSiO(x)-SiO(2)-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO(x)/SiO(2) interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide–charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 10(3) P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM. |
format | Online Article Text |
id | pubmed-5455487 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-54554872017-07-28 Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory Lin, Yu-Hsien Yang, Yi-Yun Materials (Basel) Article This paper presents a novel TaN-Al(2)O(3)-HfSiO(x)-SiO(2)-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO(x)/SiO(2) interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer at the tunnel oxide–charge storage layer interface increases the programming speed and provides satisfactory retention. This NVM device has a high program/erase (P/E) speed; a 2-V memory window can be achieved by applying 16 V for 10 μs. Regarding high-temperature retention characteristics, 62% of the initial memory window was maintained after 10(3) P/E-cycle stress in a 10-year simulation. This paper discusses the performance improvement enabled by using dipole layer engineering in the TAHOS NVM. MDPI 2015-08-07 /pmc/articles/PMC5455487/ /pubmed/28793494 http://dx.doi.org/10.3390/ma8085112 Text en © 2015 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Lin, Yu-Hsien Yang, Yi-Yun Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory |
title | Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory |
title_full | Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory |
title_fullStr | Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory |
title_full_unstemmed | Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory |
title_short | Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory |
title_sort | work function adjustment by using dipole engineering for tan-al(2)o(3)-si(3)n(4)-hfsio(x)-silicon nonvolatile memory |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455487/ https://www.ncbi.nlm.nih.gov/pubmed/28793494 http://dx.doi.org/10.3390/ma8085112 |
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