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Work Function Adjustment by Using Dipole Engineering for TaN-Al(2)O(3)-Si(3)N(4)-HfSiO(x)-Silicon Nonvolatile Memory
This paper presents a novel TaN-Al(2)O(3)-HfSiO(x)-SiO(2)-silicon (TAHOS) nonvolatile memory (NVM) design with dipole engineering at the HfSiO(x)/SiO(2) interface. The threshold voltage shift achieved by using dipole engineering could enable work function adjustment for NVM devices. The dipole layer...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2015
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455487/ https://www.ncbi.nlm.nih.gov/pubmed/28793494 http://dx.doi.org/10.3390/ma8085112 |