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Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC

An investigation of how electron/photon beam exposures affect the intercalation rate of Na deposited on graphene prepared on Si-face SiC is presented. Focused radiation from a storage ring is used for soft X-ray exposures while the electron beam in a low energy electron microscope is utilized for el...

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Autores principales: Watcharinyanon, Somsakul, Xia, Chao, Niu, Yuran, Zakharov, Alexei A., Johansson, Leif I., Yakimova, Rositza, Virojanadara, Chariya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455511/
https://www.ncbi.nlm.nih.gov/pubmed/28793470
http://dx.doi.org/10.3390/ma8084768
_version_ 1783241053691707392
author Watcharinyanon, Somsakul
Xia, Chao
Niu, Yuran
Zakharov, Alexei A.
Johansson, Leif I.
Yakimova, Rositza
Virojanadara, Chariya
author_facet Watcharinyanon, Somsakul
Xia, Chao
Niu, Yuran
Zakharov, Alexei A.
Johansson, Leif I.
Yakimova, Rositza
Virojanadara, Chariya
author_sort Watcharinyanon, Somsakul
collection PubMed
description An investigation of how electron/photon beam exposures affect the intercalation rate of Na deposited on graphene prepared on Si-face SiC is presented. Focused radiation from a storage ring is used for soft X-ray exposures while the electron beam in a low energy electron microscope is utilized for electron exposures. The microscopy and core level spectroscopy data presented clearly show that the effect of soft X-ray exposure is significantly greater than of electron exposure, i.e., it produces a greater increase in the intercalation rate of Na. Heat transfer from the photoelectrons generated during soft X-ray exposure and by the electrons penetrating the sample during electron beam exposure is suggested to increase the local surface temperature and thus the intercalation rate. The estimated electron flux density is 50 times greater for soft X-ray exposure compared to electron exposure, which explains the larger increase in the intercalation rate from soft X-ray exposure. Effects occurring with time only at room temperature are found to be fairly slow, but detectable. The graphene quality, i.e., domain/grain size and homogeneity, was also observed to be an important factor since exposure-induced effects occurred more rapidly on a graphene sample prepared in situ compared to on a furnace grown sample.
format Online
Article
Text
id pubmed-5455511
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-54555112017-07-28 Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC Watcharinyanon, Somsakul Xia, Chao Niu, Yuran Zakharov, Alexei A. Johansson, Leif I. Yakimova, Rositza Virojanadara, Chariya Materials (Basel) Article An investigation of how electron/photon beam exposures affect the intercalation rate of Na deposited on graphene prepared on Si-face SiC is presented. Focused radiation from a storage ring is used for soft X-ray exposures while the electron beam in a low energy electron microscope is utilized for electron exposures. The microscopy and core level spectroscopy data presented clearly show that the effect of soft X-ray exposure is significantly greater than of electron exposure, i.e., it produces a greater increase in the intercalation rate of Na. Heat transfer from the photoelectrons generated during soft X-ray exposure and by the electrons penetrating the sample during electron beam exposure is suggested to increase the local surface temperature and thus the intercalation rate. The estimated electron flux density is 50 times greater for soft X-ray exposure compared to electron exposure, which explains the larger increase in the intercalation rate from soft X-ray exposure. Effects occurring with time only at room temperature are found to be fairly slow, but detectable. The graphene quality, i.e., domain/grain size and homogeneity, was also observed to be an important factor since exposure-induced effects occurred more rapidly on a graphene sample prepared in situ compared to on a furnace grown sample. MDPI 2015-07-28 /pmc/articles/PMC5455511/ /pubmed/28793470 http://dx.doi.org/10.3390/ma8084768 Text en © 2015 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Watcharinyanon, Somsakul
Xia, Chao
Niu, Yuran
Zakharov, Alexei A.
Johansson, Leif I.
Yakimova, Rositza
Virojanadara, Chariya
Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC
title Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC
title_full Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC
title_fullStr Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC
title_full_unstemmed Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC
title_short Soft X-ray Exposure Promotes Na Intercalation in Graphene Grown on Si-Face SiC
title_sort soft x-ray exposure promotes na intercalation in graphene grown on si-face sic
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455511/
https://www.ncbi.nlm.nih.gov/pubmed/28793470
http://dx.doi.org/10.3390/ma8084768
work_keys_str_mv AT watcharinyanonsomsakul softxrayexposurepromotesnaintercalationingraphenegrownonsifacesic
AT xiachao softxrayexposurepromotesnaintercalationingraphenegrownonsifacesic
AT niuyuran softxrayexposurepromotesnaintercalationingraphenegrownonsifacesic
AT zakharovalexeia softxrayexposurepromotesnaintercalationingraphenegrownonsifacesic
AT johanssonleifi softxrayexposurepromotesnaintercalationingraphenegrownonsifacesic
AT yakimovarositza softxrayexposurepromotesnaintercalationingraphenegrownonsifacesic
AT virojanadarachariya softxrayexposurepromotesnaintercalationingraphenegrownonsifacesic