Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n(+)-...

Descripción completa

Detalles Bibliográficos
Autores principales: Azeza, Bilel, Hadj Alouane, Mohamed Helmi, Ilahi, Bouraoui, Patriarche, Gilles, Sfaxi, Larbi, Fouzri, Afif, Maaref, Hassen, M’ghaieth, Ridha
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455635/
https://www.ncbi.nlm.nih.gov/pubmed/28793455
http://dx.doi.org/10.3390/ma8074544

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455635/
https://www.ncbi.nlm.nih.gov/pubmed/28793455
http://dx.doi.org/10.3390/ma8074544

Ejemplares similares