Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n(+)-...

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Detalles Bibliográficos
Autores principales: Azeza, Bilel, Hadj Alouane, Mohamed Helmi, Ilahi, Bouraoui, Patriarche, Gilles, Sfaxi, Larbi, Fouzri, Afif, Maaref, Hassen, M’ghaieth, Ridha
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5455635/
https://www.ncbi.nlm.nih.gov/pubmed/28793455
http://dx.doi.org/10.3390/ma8074544
Descripción
Sumario:This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n(+)-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n(+)-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD), photoluminescence spectroscopy (PL) and transmission electron microscopy (TEM). These results provide considerable insights into low cost III-V material-based solar cells.

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