Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C incl...

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Detalles Bibliográficos
Autores principales: Masumoto, Keiko, Asamizu, Hirokuni, Tamura, Kentaro, Kudou, Chiaki, Nishio, Johji, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, Hajime
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456011/
https://www.ncbi.nlm.nih.gov/pubmed/28788228
http://dx.doi.org/10.3390/ma7107010

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456011/
https://www.ncbi.nlm.nih.gov/pubmed/28788228
http://dx.doi.org/10.3390/ma7107010

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