A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (...

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Detalles Bibliográficos
Autores principales: Fan, Ching-Lin, Shang, Ming-Chi, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456189/
https://www.ncbi.nlm.nih.gov/pubmed/28788159
http://dx.doi.org/10.3390/ma7085761

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456189/
https://www.ncbi.nlm.nih.gov/pubmed/28788159
http://dx.doi.org/10.3390/ma7085761

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