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A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme

Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (...

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Autores principales: Fan, Ching-Lin, Shang, Ming-Chi, Li, Bo-Jyun, Lin, Yu-Zuo, Wang, Shea-Jue, Lee, Win-Der
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2014
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456189/
https://www.ncbi.nlm.nih.gov/pubmed/28788159
http://dx.doi.org/10.3390/ma7085761
_version_ 1783241194766073856
author Fan, Ching-Lin
Shang, Ming-Chi
Li, Bo-Jyun
Lin, Yu-Zuo
Wang, Shea-Jue
Lee, Win-Der
author_facet Fan, Ching-Lin
Shang, Ming-Chi
Li, Bo-Jyun
Lin, Yu-Zuo
Wang, Shea-Jue
Lee, Win-Der
author_sort Fan, Ching-Lin
collection PubMed
description Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm(2)/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased.
format Online
Article
Text
id pubmed-5456189
institution National Center for Biotechnology Information
language English
publishDate 2014
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-54561892017-07-28 A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme Fan, Ching-Lin Shang, Ming-Chi Li, Bo-Jyun Lin, Yu-Zuo Wang, Shea-Jue Lee, Win-Der Materials (Basel) Article Minimizing the parasitic capacitance and the number of photo-masks can improve operational speed and reduce fabrication costs. Therefore, in this study, a new two-photo-mask process is proposed that exhibits a self-aligned structure without an etching-stop layer. Combining the backside-ultraviolet (BUV) exposure and backside-lift-off (BLO) schemes can not only prevent the damage when etching the source/drain (S/D) electrodes but also reduce the number of photo-masks required during fabrication and minimize the parasitic capacitance with the decreasing of gate overlap length at same time. Compared with traditional fabrication processes, the proposed process yields that thin-film transistors (TFTs) exhibit comparable field-effect mobility (9.5 cm(2)/V·s), threshold voltage (3.39 V), and subthreshold swing (0.3 V/decade). The delay time of an inverter fabricated using the proposed process was considerably decreased. MDPI 2014-08-11 /pmc/articles/PMC5456189/ /pubmed/28788159 http://dx.doi.org/10.3390/ma7085761 Text en © 2014 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Fan, Ching-Lin
Shang, Ming-Chi
Li, Bo-Jyun
Lin, Yu-Zuo
Wang, Shea-Jue
Lee, Win-Der
A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
title A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
title_full A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
title_fullStr A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
title_full_unstemmed A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
title_short A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme
title_sort self-aligned a-igzo thin-film transistor using a new two-photo-mask process with a continuous etching scheme
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456189/
https://www.ncbi.nlm.nih.gov/pubmed/28788159
http://dx.doi.org/10.3390/ma7085761
work_keys_str_mv AT fanchinglin aselfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT shangmingchi aselfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT libojyun aselfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT linyuzuo aselfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT wangsheajue aselfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT leewinder aselfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT fanchinglin selfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT shangmingchi selfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT libojyun selfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT linyuzuo selfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT wangsheajue selfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme
AT leewinder selfalignedaigzothinfilmtransistorusinganewtwophotomaskprocesswithacontinuousetchingscheme