Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current,...

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Detalles Bibliográficos
Autores principales: Zhao, Weisheng, Zhao, Xiaoxuan, Zhang, Boyu, Cao, Kaihua, Wang, Lezhi, Kang, Wang, Shi, Qian, Wang, Mengxing, Zhang, Yu, Wang, You, Peng, Shouzhong, Klein, Jacques-Olivier, de Barros Naviner, Lirida Alves, Ravelosona, Dafine
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456535/
https://www.ncbi.nlm.nih.gov/pubmed/28787842
http://dx.doi.org/10.3390/ma9010041

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456535/
https://www.ncbi.nlm.nih.gov/pubmed/28787842
http://dx.doi.org/10.3390/ma9010041

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