Room Temperature Electroluminescence from Tensile-Strained Si(0.13)Ge(0.87)/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Direct band electroluminescence (EL) from tensile-strained Si(0.13)Ge(0.87)/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and bandgap narrowing induced by tensile strain in Ge...

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Detalles Bibliográficos
Autores principales: Lin, Guangyang, Chen, Ningli, Zhang, Lu, Huang, Zhiwei, Huang, Wei, Wang, Jianyuan, Xu, Jianfang, Chen, Songyan, Li, Cheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456644/
https://www.ncbi.nlm.nih.gov/pubmed/28773923
http://dx.doi.org/10.3390/ma9100803

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456644/
https://www.ncbi.nlm.nih.gov/pubmed/28773923
http://dx.doi.org/10.3390/ma9100803

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